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Proceedings Paper

High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser
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Paper Abstract

Multi-layer mirrors capable of >99.9% reflectivity at ~100 micron wavelengths were constructed using thin silicon etalons separated by empty gaps. Due to the large difference between the index of refraction of silicon (3.384) and vacuum (1), calculations indicate that only three periods are required to produce 99.9% reflectivity. The mirror was assembled from high purity silicon wafers, with resistivity over 4000 ohm-cm to reduce free carrier absorption. Wafers were double side polished with faces parallel within 10 arc seconds. The multi-layer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser.

Paper Details

Date Published: 8 September 2004
PDF: 7 pages
Proc. SPIE 5411, Terahertz for Military and Security Applications II, (8 September 2004); doi: 10.1117/12.542548
Show Author Affiliations
Todd W. Du Bosq, Univ. of Central Florida (United States)
Andrei V. Muravjov, Univ. of Central Florida (United States)
Robert E. Peale, Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 5411:
Terahertz for Military and Security Applications II
R. Jennifer Hwu; Dwight L. Woolard, Editor(s)

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