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Proceedings Paper

LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates
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Paper Abstract

At the Army Research Laboratory (ARL), a new ternary semiconductor system CdSexTe1-x/Si(211) is being investigated as an alternative substrate to Bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Under optimized conditions, best layers show surface defect densities less than 400 cm-2 and full width at half maximum as low as 100 arcsec with excellent uniformity over 3 inch area. LWIR HgCdTe on CdTe/Si substrates have also been grown and characterized with optical, x-ray diffraction, etch pit etching and Hall effect measurements. Photo Voltaic devices fabricated on these LWIR material shows G-R limited performance at 78K indicating detector performance is not limited by the bulk properties of the grown material.

Paper Details

Date Published: 30 August 2004
PDF: 9 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.541606
Show Author Affiliations
Priyalal S. Wijewarnasuriya, Army Research Lab. (United States)
Gregory Brill, Army Research Lab. (United States)
Y. P. Chen, Army Research Lab. (United States)
Nibir K. Dhar, Army Research Lab. (United States)
Silviu Velicu, EPIR Ltd. (United States)

Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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