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Proceedings Paper

Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications
Author(s): Joseph C. Boisvert; Andrey Masalykin; Geoffrey S. Kinsey; Takahiro Isshiki; Moran Haddad; Rengarajan Sudharsanan; Xiaoguang Zheng; Joe C. Campbell
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Paper Abstract

40x40 element InAlAs/InGaAs APD arrays have been fabricated and characterized for performance in short wave infrared (SWIR) applications. Characterization data collected to date indicate that the arrays have >99% operability at operating gains of 10. The median un-multiplied dark current for an array element is about 170 pA, and the un-multiplied responsivity at 1550 nm is about 0.75 A/W.

Paper Details

Date Published: 30 August 2004
PDF: 8 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.541541
Show Author Affiliations
Joseph C. Boisvert, Spectrolab, Inc. (United States)
Andrey Masalykin, Spectrolab, Inc. (United States)
Geoffrey S. Kinsey, Spectrolab, Inc. (United States)
Takahiro Isshiki, Spectrolab, Inc. (United States)
Moran Haddad, Spectrolab, Inc. (United States)
Rengarajan Sudharsanan, Spectrolab, Inc. (United States)
Xiaoguang Zheng, Univ. of Texas/Austin (United States)
Joe C. Campbell, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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