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Proceedings Paper

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-µm wavelength range
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Paper Abstract

An attempt is made to connect the material parameters of Hg1-xCdxTe layer growth to the parameters measured following photovoltaic detector fabrication. We found that the Cd composition X value extracted from spectral response measurements on detectors at 78 K are lower than the X values obtained from the room temperature transmission measurements, or the X value used to fit the measured material minority carrier lifetime versus temperature data. The lateral collection length Lc that determines the thermally generated carriers that contribute to the diffusion current and Lopt extracted from the "flood-illuminated" to "focused-spot" photocurrent ratio are in excellent agreement. Devices exhibit near theoretical RoA uniformity at 77K for MWIR, LWIR and VLWIR. RoAopt was also found to be uniform throughout the range of detector dimensions measured such as 8 μm diameter circular to 250 μm x 250 μm square. Median RoAopt values are 1266, 66 and 0.75 ohm-cm2 for the 9.7, 11.3 and 15.4 μm cutoff wavelengths respectively. The uniformity in RoAopt confirms that the detector performance is limited by the bulk properties of the material, and not by surface effects.

Paper Details

Date Published: 30 August 2004
PDF: 9 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.540997
Show Author Affiliations
Priyalal S. Wijewarnasuriya, Army Research Lab. (United States)
Nibir K. Dhar, Army Research Lab. (United States)
Arvind I. D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
Maryn G. Stapelbroek, DRS Sensors & Targeting Systems, Inc. (United States)
Dennis D. Edwall, Rockwell Scientific Co. (United States)
Jose M. Arias, Rockwell Scientific Co. (United States)
Jagmohan Bajaj, Rockwell Scientific Co. (United States)

Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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