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Proceedings Paper

Laser cleaning technology of the contact hole for semiconductor manufacturing
Author(s): Dae-Jin Kim; Hyun-Jung Kim; Je-Kil Ryu; Sung-Sik Pak
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Paper Abstract

The laser cleaning of the photoresist (PR) layer has been investigated as a function of laser energy density. The cleaning of the PR layer on silicon wafer was performed by a line beam of a KrF excimer laser in a cleanroom environment and then the applied energy density was 100 - 300 mJ/cm2. The experimental results showed that the ablation rates of the PR are increased with increasing of laser energy density without silicon wafer damage. The ablation rates of PR were 0.09 μm/pulse for 100 mJ/cm2, 0.15 μm/pulse for 200 mJ/cm2 and 0.19 μm/pulse for 300 mJ/cm2 with repetition rate of 30 Hz. The compositions of the PR covered wafers before and after laser irradiation were determined by Fourier transform infrared spectroscopy (FT-IR). The comparison of the cleaning results done in applying the laser cleaning to remove the PR and the metallic polymers resulting from reactive ion etching (RIE) was made before and after laser irradiation by scanning electron microscope (SEM). It is also shown that the PR and metallic polymer in the contact hole can be completely removed by the laser cleaning technique.

Paper Details

Date Published: 18 November 2003
PDF: 4 pages
Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003);
Show Author Affiliations
Dae-Jin Kim, Hantech Co., Ltd. (South Korea)
Hyun-Jung Kim, Hantech Co., Ltd. (South Korea)
Je-Kil Ryu, Hantech Co., Ltd. (South Korea)
Sung-Sik Pak, Hantech Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5063:
Fourth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Andreas Ostendorf; Koji Sugioka; Henry Helvajian, Editor(s)

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