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Proceedings Paper

Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors
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Paper Abstract

Photoresist patterning experiments on the EUVL Engineering Test Stand using two masks with different types of architecture indicate that etched-multilayer binary masks can provide larger process latitude than standard patterned absorber masks. The trends observed in the experimental data are confirmed by rigorous electromagnetic simulations taking into account the mask structure, the imaging optics characteristics and the illumination conditions.

Paper Details

Date Published: 20 May 2004
PDF: 11 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.539074
Show Author Affiliations
Bruno La Fontaine, Advanced Micro Devices, Inc. (United States)
Adam R. Pawloski, Advanced Micro Devices, Inc. (United States)
Yunfei Deng, Advanced Micro Devices, Inc. (United States)
Univ. of California/Berkeley (United States)
Christian Chovino, DuPont Photomasks, Inc. (United States)
Laurent Dieu, DuPont Photomasks, Inc. (United States)
Obert R. Wood II, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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