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Proceedings Paper

Low linewidth enhancement factor and chirp and suppressed filamentation in tunnel-injection In0.4Ga0.6As self-assembled quantum dot lasers
Author(s): Sasan Fathpour; Pallab K. Bhattacharya; Siddhartha Ghosh
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Paper Abstract

We report measurements of the near-field pattern of ridge-waveguide tunnel injection In0.4Ga0.6As/GaAs self-assembled quantum dot lasers and have compared the results with similar strained quantum well lasers. While no filamentation is observed in the quantum dot devices, significant filamentatin and side lobes are observed in the quantum well lasers. The trend is corroborated by measured linewidth enhancement factor, α, of the two types of devices. Values of α~3.8 are measured in the quantum well lasers, while α is ≤0.7 in the quantum dot lasers, suggesting a very small refractive index change with injection in the active region. Chirp ≤0.6Å is measured in the tunnel injection devices, while it varies in the 1.6-3 Å range in the quantum well lasers.

Paper Details

Date Published: 14 June 2004
PDF: 6 pages
Proc. SPIE 5361, Quantum Dots, Nanoparticles, and Nanoclusters, (14 June 2004); doi: 10.1117/12.537972
Show Author Affiliations
Sasan Fathpour, Univ. of Michigan (United States)
Pallab K. Bhattacharya, Univ. of Michigan (United States)
Siddhartha Ghosh, Univ. of Illinois at Chicago (United States)

Published in SPIE Proceedings Vol. 5361:
Quantum Dots, Nanoparticles, and Nanoclusters
Diana L. Huffaker; Pallab Bhattacharya, Editor(s)

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