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Proceedings Paper

PEB sensitivity studies of ArF resists: II. Polymer and solvent effects
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Paper Abstract

Keeping post exposure bake (PEB) sensitivity low has become one of the most crucial factors for implementing the 193nm resist process into mass production. In a previous report, we have demonstrated that the nature of the photo acid generator (PAG) has a strong effect on the PEB sensitivity of 193 resists. Based on our findings, we decided to extend our studies to the other important resist components, such as polymers prepared with various monomer compositions, and casting solvents. Also, in an effort to investigate whether PEB sensitivity can be reduced by process optimization, the influence of soft bake and post exposure bake conditions was studied. This paper describes our new findings on some of the important factors that affect the PEB sensitivity of 193 resists.

Paper Details

Date Published: 14 May 2004
PDF: 7 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537931
Show Author Affiliations
Chi-Sun Hong, Clariant Corp. (United States)
Sang-Ho Lee, Clariant Corp. (United States)
Woo-Kyu Kim, Clariant Corp. (United States)
Takanori Kudo, Clariant Corp. (United States)
Allen Timko, Clariant Corp. (United States)
Douglas Mckenzie, Clariant Corp. (United States)
Clement Anyadiegwu, Clariant Corp. (United States)
Dalil M. Rahman, Clariant Corp. (United States)
Guanyang Lin, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Munirathna Padmanaban, Clariant Corp. (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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