
Proceedings Paper
Monolithically integrated InP-based tunable wavelength conversionFormat | Member Price | Non-Member Price |
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Paper Abstract
In this work, we describe tunable wavelength converters based on a photodiode receiver integrated with a tunable laser transmitter. Devices are fabricated on a robust InP ridge/InGaAsP waveguide platform. The photodiode receiver consists of an integrated SOA pre-amplifier and a PIN diode to improve sensitivity. The laser transmitter consists of a 1550 nm widely tunable SGDBR laser modulated either directly or via an integrated modulator outside the laser cavity. An SOA post-amplifier provides high output power. The integrated device allows signal monitoring, transmits at 2.5 GB/s, and removes the requirements for filtering the input wavelength at the output. Integrating the SGDBR yields a compact wavelength agile source that requires only two fiber connections, and no off-chip high speed electrical connections. Analog and digital performance of directly and externally modulated wavelength converters is also described.
Paper Details
Date Published: 18 June 2004
PDF: 9 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.537774
Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)
PDF: 9 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.537774
Show Author Affiliations
John M. Hutchinson, Intel Corp. (United States)
Jonathon S. Barton, Univ. of California/Santa Barbara (United States)
Milan L. Masanovic, Univ. of California/Santa Barbara (United States)
Matthew N. Sysak, Univ. of California/Santa Barbara (United States)
Jonathon S. Barton, Univ. of California/Santa Barbara (United States)
Milan L. Masanovic, Univ. of California/Santa Barbara (United States)
Matthew N. Sysak, Univ. of California/Santa Barbara (United States)
Jeffrey A. Henness, Univ. of California/Santa Barbara (United States)
Leif A. Johansson, Univ. of California/Santa Barbara (United States)
Daniel J. Blumenthal, Univ. of California/Santa Barbara (United States)
Larry A. Coldren, Univ. of California/Santa Barbara (United States)
Leif A. Johansson, Univ. of California/Santa Barbara (United States)
Daniel J. Blumenthal, Univ. of California/Santa Barbara (United States)
Larry A. Coldren, Univ. of California/Santa Barbara (United States)
Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)
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