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Proceedings Paper

Femtosecond laser ablation of materials
Author(s): Sebastien Bruneau; Joerg Hermann; Marc L. Sentis; Gabriel Dumitru; Valerio Romano; Heinz P. Weber; Alexandre F. Semerok; Wladimir Marine
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Paper Abstract

Polycrystalline SiGe is attracting more and more attention in micro and optoelectronics devices both at industrial and university level. Research on both devices and material growth techniques continues at a very rapid pace in the scientific world. Low cost production techniques, capable to produce such alloys with uniform and controlled grain size, becomes of particular attention. Excimer laser crystallization has proved to be a valuable how thermal budget technique for amorphous silicon crystallization. Its main advantages are the high process quality and reproducibility joint to the possibility of tailoring the grain sizes both in small selected regions and in large areas. This technique is here applied for producing poly-SiGe alloys from amorphous SiGe films deposited on glass.

Paper Details

Date Published: 14 November 2003
PDF: 5 pages
Proc. SPIE 5147, ALT'02 International Conference on Advanced Laser Technologies, (14 November 2003);
Show Author Affiliations
Sebastien Bruneau, Univ. de la Mediterranee (France)
Joerg Hermann, Univ. de la Mediterranee (France)
Marc L. Sentis, Univ. de la Mediterranee (France)
Gabriel Dumitru, Univ. of Bern (Switzerland)
Valerio Romano, Univ. of Bern (Switzerland)
Heinz P. Weber, Univ. of Bern (Switzerland)
Alexandre F. Semerok, CEA Saclay (France)
Wladimir Marine, Univ. de la Mediterranee (France)

Published in SPIE Proceedings Vol. 5147:
ALT'02 International Conference on Advanced Laser Technologies
Heinz P. Weber; Vitali I. Konov; Thomas Graf, Editor(s)

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