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Proceedings Paper

Impact of resist blur on MEF, OPC, and CD control
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Paper Abstract

This paper will consider the basic concepts of resist blur in a chemically amplified resist process, and the implications of this blur to lithography. In particular, use of a double Gaussian form for the resist blur will be explored. A simple lithographic model utilizing a double Gaussian resist blur was developed and applied to the rapid calculation of lithographic CDs. A typical gate patterning problem was modeled, both with and without assist features, using several different resist blur functions. The OPC treatment was found to be profoundly affected by the resist blur, especially the long-range component. The MEF of small pitch patterns was a sensitive indicator of the short-range blur. The rapid modeling capability allowed large Monte Carlo simulations to explore CD variation at different pitches, pointing out pitches that were particularly vulnerable to CD variation.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537472
Show Author Affiliations
Timothy A. Brunner, IBM Microelectronics Div. (United States)
Carlos Fonseca, IBM Microelectronics Div. (United States)
Nakgeuon Seong, IBM Microelectronics Div. (United States)
Martin Burkhardt, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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