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Proceedings Paper

The impact of MEEF through pitch for 120-nm contact holes
Author(s): Lloyd C. Litt; Wei Wu; Will Conley; Kevin D. Lucas; Bernard J. Roman; Patrick Montgomery; Bryan S. Kasprowicz; Christopher J. Progler; Robert John Socha; Arjan Verhappen; Kurt E. Wampler; Erika Schaefer; Pat Cook; Jan-Pieter Kuijten; Wil Pijnenburg
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Paper Abstract

Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET’s). The race to smaller and smaller geometries has forced device manufacturers to k1’s approaching 0.40. In this paper the authors will focus on the impact of mask exposure error factor (MEEF) through pitch for 120nm contacts with and without assist features. Experimental results show that although the addition of scatter bars improves depth of focus it has a negative effect on MEEF.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537437
Show Author Affiliations
Lloyd C. Litt, Motorola (United States)
Wei Wu, Motorola (United States)
Will Conley, Motorola (United States)
Kevin D. Lucas, Motorola (United States)
Bernard J. Roman, Motorola (United States)
Patrick Montgomery, Motorola (United States)
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Christopher J. Progler, Photronics, Inc. (United States)
Robert John Socha, ASML (United States)
Arjan Verhappen, ASML (Netherlands)
Kurt E. Wampler, ASML (United States)
Erika Schaefer, ASML (United States)
Pat Cook, ASML (United States)
Jan-Pieter Kuijten, ASML (Netherlands)
Wil Pijnenburg, ASML (Netherlands)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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