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Proceedings Paper

Scaling studies of capping layer oxidation by water exposure with EUV radiation and electrons
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Paper Abstract

Silicon capped [Mo/Si] multilayer mirrors (MLM’s) can undergo oxidation by the combined effects of radiation (Extreme Ultraviolet [EUV], electron) and water vapor. This parametric study provides silicon-capped MLM oxidation rate data. The goal of this study was to determine the dependence of silicon oxidation on water vapor pressure and radiation flux density over three orders of magnitude. Previous work1 has shown that electron and 95.3 eV EUV exposures produce similar oxidation. The present study verifies that correlation and examines the effects of EUV and electron flux on the oxidation rate of the Si-capping layer. E-beam and EUV exposed areas on silicon-capped MLM samples were analyzed following radiation exposure by Auger depth profiling to determine the thickness of the oxide grown. A ruthenium (Ru) capped MLM was also exposed for 4-hours, however it showed very little oxidation under the most extreme conditions of our test matrix. Also the effect of varying the primary e-beam voltage (0.5-2.0 keV) on Si-capped MLM was examined, which showed that exposures in the 1-2 keV range produce similar results.

Paper Details

Date Published: 20 May 2004
PDF: 9 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537403
Show Author Affiliations
W. Miles Clift, Sandia National Labs. (United States)
Leonard Elliott Klebanoff, Sandia National Labs. (United States)
Charles Tarrio, National Institute of Standards and Technology (United States)
Steven Grantham, National Institute of Standards and Technology (United States)
Obert R. Wood II, International SEMATECH (United States)
Stefan Wurm, International SEMATECH (United States)
Nora V. Edwards, International SEMATECH (United States)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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