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Proceedings Paper

EUV imaging: an aerial image study
Author(s): Martin Lowisch; Udo Dinger; Uwe Mickan; Tilmann Heil
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Paper Abstract

This work discusses the imaging properties of EUVL systems on the basis of an aerial image study in resist. A process window analysis for the lithographic structures which are driving the ITRS roadmap is presented. Here we cover the 45 nm and 32 nm node. In a first step we focus on the contribution of wavefront aberrations and flare effects to the imaging performance. In a second step we investigate the process latitude for different generic pattern of the above mentioned nodes. It becomes clear that EUVL tools are a very good choice for the printing of contact holes. Dense and semi-dense lines can be easily printed too, using a conventional illumination setting. From our current perspective, isolated features on bright field reticles are the most challenging structures for EUV imaging due to the flare impact on contrast and process latitude. Related to flare we discuss our progress in mirror surface manufacturing to reduce the overall flare level.

Paper Details

Date Published: 20 May 2004
PDF: 11 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.537338
Show Author Affiliations
Martin Lowisch, Carl Zeiss SMT AG (Germany)
Udo Dinger, Carl Zeiss SMT AG (Germany)
Uwe Mickan, ASML Netherlands B.V. (Netherlands)
Tilmann Heil, Carl Zeiss SMT AG (Germany)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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