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Proceedings Paper

157-nm photoresist process optimization for a full-field scanner
Author(s): Scott Light; Nickolay Stepanenko; Roel Gronheid; Frieda Van Roey; Dieter Van den Heuvel; Anne-Marie Goethals
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Paper Abstract

Most 157nm resist optimization to date has been done with micro-steppers, but there may be significant differences in resist profiles and process windows between micro-steppers and full field scanners. Several resists were evaluated on an ASML MS VII full-field 157nm scanner at IMEC. Focus and exposure latitudes were measured for resist lines using various feature sizes and pitches with different reticle types and illumination conditions. Resist sensitivity to post-expose bake temperature were measured. Delay effects, line-edge roughness, line slimming in a CD SEM, and etch resistance were also evaluated.

Paper Details

Date Published: 28 May 2004
PDF: 11 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537212
Show Author Affiliations
Scott Light, IMEC (Belgium)
IMEC (Belgium)
Nickolay Stepanenko, IMEC (Belgium)
IMEC vzw (Belgium)
Roel Gronheid, IMEC (Belgium)
Frieda Van Roey, IMEC (Belgium)
Dieter Van den Heuvel, IMEC (Belgium)
Anne-Marie Goethals, IMEC (Belgium)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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