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Proceedings Paper

Minimizing mask complexity for advanced optical lithography
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Paper Abstract

The extension of optical lithography to ever deeper sub-wavelength feature sizes has led to an alarming increase in photo-mask complexity and associated cost. Changes in design philosophy can play a key role in mitigating this trend. We propose the introduction of a new optimization cycle early in the physical design process based on minimizing pattern complexity. We study the use of a pattern complexity metric based on Fourier coding to accomplish such an optimization. The ultimate goal is simplification of resolution enhancement technology (RET) methods required for a given design and the generation of a correspondingly simpler and more cost effective mask set.

Paper Details

Date Published: 3 May 2004
PDF: 9 pages
Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.536369
Show Author Affiliations
Michael Fritze, MIT Lincoln Lab. (United States)
Brian Tyrrell, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 5379:
Design and Process Integration for Microelectronic Manufacturing II
Lars W. Liebmann, Editor(s)

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