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Proceedings Paper

Feasibility studies of ArF chromeless mask (CLM) for sub-80-nm era
Author(s): Tae-Seung Eom; Chang-Moon Lim; Min Gyu Sung; Seung Chan Moon; Ki Soo Shin
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Paper Abstract

In this paper, we discuss feasibility of ArF chromeless mask (CLM) for sub-80nm era. Simulation and experiment are performed in terms of influence of quartz sidewall angle of CLM, process margin for 80nm DRAM cells, and mask polarity such as trench or mesa etc. Mask layouts are optimized through the use of resist patterning simulation for various critical layers of DRAM with trench and mesa type CLM, respectively. Lithography simulation is done by using in-house tool based on diffused aerial image model. SOLID-CTM is also using in order to study the influence of quartz sidewall angle and mask polarity. In the case of mask polarity, mesa type CLM is easier to make in the view of mask-making process, but in view of lithographic performance, trench type CLM is found to be better than mesa type. Quartz sidewall angle of CLM is one of the important factors for lithographic performance. The quartz sidewall angle of CLM gives severe impact on the lithographic performance. As quartz sidewall angle of CLM gets below 90 degrees, image quality, such as process window, aerial image contrast, are further degraded especially in the mesa type CLM. In addition, we also studied influence of phase error, transmittance error etc.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536346
Show Author Affiliations
Tae-Seung Eom, Hynix Semiconductor Inc. (South Korea)
Chang-Moon Lim, Hynix Semiconductor Inc. (South Korea)
Min Gyu Sung, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)
Ki Soo Shin, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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