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Proceedings Paper

LEEPL (low-energy electron beam proximity-projection lithography) over-lay status
Author(s): Norifumi S. Nakajima; Takuji Atarashi; Hiroyuki Sakai; Toyoji Fukui; Hideaki Takano; Daizo Amano
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Paper Abstract

The image placement (IP) error correction is one of the advantages for E-beam lithography tool. LEEPL (Low Energy Electron beam Proximity-projection Lithography) 1,2) which is using stencil mask is able to shift the mask patter image by e-beam angle control. To use this unique technique week point of the stencil mask distortion is compensated. The flexibility of LEEPL E-beam IP correction for over lay is evaluated. The LEEPL E-beam IP correction is done by Sub-Deflector beam control. The feature to improve the over lay accuracy is introduced. It is not only for Mask IP error correction but also for Mask distortion by holding, under layer shot distortion and wafer chucking distortion.

Paper Details

Date Published: 20 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.536229
Show Author Affiliations
Norifumi S. Nakajima, Tokyo Seimitsu Co., Ltd. (Japan)
Takuji Atarashi, Tokyo Seimitsu Co., Ltd. (Japan)
Hiroyuki Sakai, Tokyo Seimitsu Co., Ltd. (Japan)
Toyoji Fukui, Tokyo Seimitsu Co., Ltd. (Japan)
Hideaki Takano, Tokyo Seimitsu Co., Ltd. (Japan)
Daizo Amano, Sumitomo Heavy Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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