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Proceedings Paper

Analysis of off-axis illumination-based phase-edge/chromeless mask technologies
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Paper Abstract

Production readiness of phase-edge/chromeless reticles employing off-axis illuminations for 65nm node lithography is assessed through evaluation of mask design conversion and critical layer lithography performance. Using ASML /1100ArF scanners, we achieved k1=0.33 for chromeless phase shift mask (crlPSM) with more than 0.6um DOF for dense features. Subresolution assist features allow for acceptable depth of focus through pitch. However, chromeless feature linearity fall-off continues to be a major issue hampering the acceptance of crlPSM for production. Several mask data conversion schemes such as chromeless gratings and chrome patches have been proposed as viable solutions to mitigate the chromeless linearity fall-off issue. We evaluated chromeless gratings, chromeless rims and chrome patches and report on their performance in resolving the chromeless linearity fall-off issues as well as mask process complexity associated with each solution.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536172
Show Author Affiliations
Ebo H. Croffie, LSI Logic Corp. (United States)
Kunal N. Taravade, LSI Logic Corp. (United States)
Neal Callan, LSI Logic Corp. (United States)
Keuntaek Park, Dupont Photomasks, Inc. (United States)
Gregory P. Hughes, Dupont Photomasks, Inc. (United States)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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