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Proceedings Paper

Methods for evaluating lithographic performance of exposure tools for the 45-nm node: ECD and scatterometry
Author(s): Karen Huang; Bryan J. Rice; Brian Coombs; Regina Freed
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Paper Abstract

This paper compares two metrology methodologies, ECD (Electrical CD) and SCD (Spectroscopic CD), for the 45nm-node-like gate level. Measurements were taken on both metrology tools, for different features, and the data was processed to reflect the exposure tool’s fingerprint within the exposure field. ACLV (cross chip line-width variation) and through-focus measurements were also collected. There is a DC bias between the ECD and SCD. The cross slit and cross scan average plots are very similar between the two methods. The correlation between ECD and SCD gave R2 of 0.95 and 0.92 for 220nm and 480nm pitches respectively. Results showed that SCD is a viable candidate to replace ECD for characterizing the exposure system for the 45nm node. Data also showed that there are fundamental differences between the two methods that cannot be attributed to random errors. These differences account for less than 1nm at 3 σ.

Paper Details

Date Published: 24 May 2004
PDF: 9 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536062
Show Author Affiliations
Karen Huang, Intel Corp. (United States)
Bryan J. Rice, Intel Corp. (United States)
Brian Coombs, Intel Corp. (United States)
Regina Freed, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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