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Proceedings Paper

Techniques for directly measuring the absorbance of photoresists at EUV wavelengths
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Paper Abstract

Absorbance is a key characteristic of photoresists that can limit resolution, wall angle, and practical resist film thicknesses. Currently, however, there is limited data for absorbance of resists at EUV (13.5 nm) wavelengths. The most common way of estimating the absorbance of materials at EUV wavelengths is to use an experimentally measured value of density along with stoichiometric chemical information of the material in a theoretical calculation such as that available through the Center for X-Ray Optics at Lawrence Berkeley National Laboratory website.1 However, there is limited validation of these estimates for photoresists. The paper will compare calculations using density measurements of EUV-2D by a variety of methods: traditional weight measurements and Specular X-ray reflectivity (SXR) to determine density; and against grazing incidence and normal incidence reflectivity measurements to determine absorbance directly. It will be shown that inaccurate density measurements can result in 10% or greater absorbance estimates from the calculations. Based on the results, recommendations will be made for measurement techniques and accurate density based calculations of photoresist absorbance.

Paper Details

Date Published: 20 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.535959
Show Author Affiliations
Manish Chandhok, Intel Corp. (United States)
Heidi Cao, Intel Corp. (United States)
Wang Yueh, Intel Corp. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Robert L. Brainard, Rohm and Haas Microelectronics (United States)
Stewart A. Robertson, Rohm and Haas Microelectronics (United States)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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