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Proceedings Paper

RET for optical maskless lithography
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Paper Abstract

Due to the ever-increasing mask cost, Optical Maskless Lithography provides an attractive alternative to mask-based lithography, especially for low-volume runs. In order to offer a seamless mix-and-match solution with mask-based scanners, or a complete transfer from mask-based to maskless lithography, the imaging performance of a maskless tool must at least match the performance of a regular scanner. This paper reports results from simulations showing very good agreement with a mask-based scanner at the 65 nm design node, including semi-isolated lines of 50 nm (AttPSM), 45 nm (CPL), and 35 nm (phase edge). Due to a new enhanced rasterization, the results show minor or no influence at all from the pixel grid. The results also indicate that a maskless tool can use the same OPC model as a mask-based scanner, including phase-shifting.

Paper Details

Date Published: 28 May 2004
PDF: 14 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535414
Show Author Affiliations
Tor Sandstrom, Micronic Laser Systems AB (Sweden)
Hans Martinsson, Micronic Laser Systems AB (Sweden)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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