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Proceedings Paper

Aberration measurement and matching: a correlation of measurement technique and dedication scheme implications
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Paper Abstract

The need to improve the Overlay and CD Budget requirements of current device technologies has driven the introduction of tool dedication schemes in semiconductor manufacturing. Dedication schemes have provided an opportunity to minimize systematic field distortion differences from layer to layer. The cost and manufacturing complexity of dedication schemes can however be a burden on the process and tools required. We will present experimental results of an aberration measurement method used on a Front End of Line tool-set to empirically describe the matching of a series of tools used in a dedicated processing scheme. We will also show simulation results of Pattern Placement Error and CD uniformity effects for the highlighted aberrations. We will use these findings to support product results generated while exercising dedication break analyses experiments on this tool set.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535288
Show Author Affiliations
William R. Roberts, Infineon Technologies (United States)
Igor Jekauc, Infineon Technologies (United States)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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