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Proceedings Paper

157-nm lithography with extremely high numerical aperture lens for 45-nm technology node
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Paper Abstract

The potential for extending the numerical aperture (NA) in order to develop devices beyond the 45-nm node has been investigated using a 157-nm microstepper exposure tool at 0.90NA (third generation) and verifying the resolution limit of several different resolution enhancement techniques. It was observed that with 157-nm lithography at 0.90NA a 60-nm line and space (L/S) and a 50-nm isolated line could be formed by using an attenuated phase shifting mask (Att-PSM), and that a 50-nm L/S and a 35-nm isolated line could be formed by using an alternating phase shifting mask (Alt-PSM). The influence of the flare for the same pattern sizes was more severe for the L/S pattern rather than isolated line. However, it was the most difficult to image an isolated line with an Att-PSM, which was limited with a tolerance to the flare of less than 1%. Furthermore, the requirement of more than 0.93 for lens NA was confirmed in order to fabricate half pitch 65-nm node device with Att-PSM and half pitch 45-nm node device with Alt-PSM. Results obtained in the pattern formation of 45-nm node with an Alt-PSM confirmed that a 35-nm line could be formed down to 140-nm pitch, a 40-nm line could be formed down to 135-nm pitch, and a 45-nm line could be formed down to 100-nm pitch. It has been demonstrated that 157-nm lithography could find application to half-pitch 65-nm and 45-nm node devices.

Paper Details

Date Published: 28 May 2004
PDF: 12 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535119
Show Author Affiliations
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Jeung-Woo Lee, Semiconductor Leading Edge Technologies, Inc. (Japan)
Eiji Kurose, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiyuki Ishimaru, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takamitsu Furukawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, NEC Electronics Corp. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julian S. Cashmore, Exitech Ltd. (United Kingdom)
Malcolm Gower, Exitech Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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