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Proceedings Paper

High-performance 193nm photoresist materials based on ROMA polymers: sub-90nm contact hole application with resist reflow
Author(s): Hyun Sang Joo; Dong Chul Seo; Chang Min Kim; Young Taek Lim; Seong Duk Cho; Jong Bum Lee; Ji Young Song; Kyoung Mun Kim; Joo Hyeon Park; Jae Chang Jung; Ki Soo Shin; Cheol Kyu Bok; Seung Chan Moon
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Paper Abstract

There are numerous methods being explored by lithographers to achieve the patterning of sub-90nm contact hole features. Regarding optical impact on contact imaging, various optical extension techniques such as assist features, focus drilling, phase shift masks, and off-axis illumination are being employed to improve the aerial image. One possible option for improving of the process window in contact hole patterning is resist reflow. We have already reported the resist using a ring opened polymer of maleic anhydride unit(ROMA) during the past two years in this conference. It has several good properties such as UV transmittance, PED stability, solubility and storage stability. The resist using ROMA polymer as a matrix resin showed a good lithographic performance at C/H pattern and one of the best characteristics in a ROMA polymer is the property of thermal shrinkage. It has a specific glass transition temperature(Tg) each polymers, so they made a applying of resist reflow technique to print sub-90nm C/H possible. Recently, we have researched about advanced ROMA polymer(ROMA II), which is composed of cycloolefine derivatives with existing ROMA type polymer(ROMA I), for dry etch resistance increasing, high resolution, and good thermal shrinkage property. In this paper, we will present the structure, thermal shrinkage properties, Tg control, material properties for ROMA II polymer and will show characteristics, the lithographic performance for iso and dense C/H applications of the resist using ROMA II polymer. In addition, we will discuss resist reflow data gained at C/H profile of sub-90nm sizes, which has good process window.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535117
Show Author Affiliations
Hyun Sang Joo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Dong Chul Seo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Chang Min Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Young Taek Lim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Seong Duk Cho, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Jong Bum Lee, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Ji Young Song, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Kyoung Mun Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Joo Hyeon Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Jae Chang Jung, Hynix Semiconductor Inc. (South Korea)
Ki Soo Shin, Hynix Semiconductor Inc. (South Korea)
Cheol Kyu Bok, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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