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Proceedings Paper

Optical lithography with 157-nm technology
Author(s): Theo M. Modderman; Hans Jasper; Herman Boom; Tammo Uitterdijk; Stephane Dana; Harry Sewell; Timothy K. O'Neil; Jan Mulkens; Martin Brunotte; Birgit Mecking; Toralf Gruner
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Paper Abstract

This paper presents the progress of the 157 nm lithography program at ASML and Carl Zeiss SMT in 2003. The major technical problems are solved and the first full field 157 nm scanner was shipped to the industry for starting the process development. The progress in CaF2 material as well as production of CaF2 lens elements allow system to be produced for the 55 nm node. Contamination is shown to be at very low levels and a solution to reduce the influence of hard pellicles below 1 nm distortion is found. The first imaging results show a high depth of focus for 75 nm dense lines.

Paper Details

Date Published: 28 May 2004
PDF: 11 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535101
Show Author Affiliations
Theo M. Modderman, ASML (Netherlands)
Hans Jasper, ASML (Netherlands)
Herman Boom, ASML (Netherlands)
Tammo Uitterdijk, ASML (Netherlands)
Stephane Dana, ASML (Netherlands)
Harry Sewell, ASML (United States)
Timothy K. O'Neil, ASML (United States)
Jan Mulkens, ASML (Netherlands)
Martin Brunotte, Carl Zeiss (Germany)
Birgit Mecking, Carl Zeiss (Germany)
Toralf Gruner, Carl Zeiss (Germany)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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