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Proceedings Paper

Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography
Author(s): Takuya Hagiwara; Takamitsu Furukawa; Toshiro Itani; Kiyoshi Fujii; Takuji Ishikawa; Meiten Koh; Tetsuhiro Kodani; Tsukasa Moriya; Tsuneo Yamashita; Takayuki Araki; Minoru Toriumi; Hirokazu Aoyama
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Paper Abstract

Fluoropolymers are key materials in the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential use as base resins. These polymers are main-chain fluorinated polymers synthesized by co-polymerizing tetrafluoroethylene (TFE) and functional norbornene. We developed a new polymer that is highly transparent and has high dry-etching resistance by attaching a PG-F protecting group, which has high dry-etching resistance, to a TFE/norbornene-based fluorinated polymer. The dry-etching rate for the 15 % blocked polymer was 1.50 times that of a KrF resist and its absorption coefficient at a 157-nm-exposure wavelength was 1.06 /μm. We introduced various photoacid generators (PAGs) to the polymer, and compared lithographic performance. As a result, we found polymer with a triphenylsulfonium-salts-based PAG had a good pattern profile, and polymer with a high-acidity PAG resolved a fine pattern. In particular, polymer with a triphenylsulfonium perfluorooctane sulfonate PAG was able to resolve a 60-nm line and space pattern. We then added various quenchers to the polymer and the PAG, and compared pattern profiles. We found that the use of a high-basicity quencher improved the resolution of the resist and line edge roughness. Consequently, that the polymer with the triphenylsulfonium perfluorooctane sulfonate PAG and tributylamine quencher could resolve a 55-nm line and space pattern. These results provided guidelines for choosing the PAG and quencher for this polymer.

Paper Details

Date Published: 14 May 2004
PDF: 10 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535098
Show Author Affiliations
Takuya Hagiwara, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takamitsu Furukawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
NEC Electronics Corp. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takuji Ishikawa, Daikin Industries, Ltd. (Japan)
Meiten Koh, Daikin Industries, Ltd. (Japan)
Tetsuhiro Kodani, Daikin Industries, Ltd. (Japan)
Tsukasa Moriya, Daikin Industries, Ltd. (Japan)
Tsuneo Yamashita, Daikin Industries, Ltd. (Japan)
Takayuki Araki, Daikin Industries, Ltd. (Japan)
Minoru Toriumi, Daikin Industries, Ltd. (Japan)
Hirokazu Aoyama, Daikin Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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