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Proceedings Paper

Microlens-induced pattern defect in DUV resist
Author(s): Shu-Fen Tsai; Chih-You Chen; Chih-Chuan Chang; Tai-Wei Huang; Hann-Yii Gao; Chin-Yu Ku
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Paper Abstract

During the wafer coating process, photoresist is spun-coated to desired thickness based on the process requirements. The residual resist is spun out of a wafer and partially deposited on the sidewall of the coater cup. The resist will dry out and become small particles. Those small resist particles may deposit on top of the resist film of the next processing wafer. The small particles act as micro-lens and produce distorted or unwanted patterns. In this work, the effect of those dried resist particles on resist patterning has been studied for both binary and PSM masks.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534482
Show Author Affiliations
Shu-Fen Tsai, Vanguard International Semiconductor Corp. (Taiwan)
Chih-You Chen, Vanguard International Semiconductor Corp. (Taiwan)
Chih-Chuan Chang, Vanguard International Semiconductor Corp. (Taiwan)
Tai-Wei Huang, Vanguard International Semiconductor Corp. (Taiwan)
Hann-Yii Gao, Vanguard International Semiconductor Corp. (Taiwan)
Chin-Yu Ku, Vanguard International Semiconductor Corp. (Taiwan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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