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Proceedings Paper

First via-hole TEG fabricated by using 90-nm CMOS technology and proximity electron lithography: electric and lithographic results
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Paper Abstract

Low-energy electron-beam proximity-projection lithography (LEEPL) is considered the best candidate for the next-generation lithography (NGL) tool because a production tool will be available for 65nm-node mass production. Resolution capability has already exceeded the 65nm-node requirement and possibly also the 45nm-node requirement. Although LEEPL requires a resist less than 100nm thick to obtain the resolution, our tri-layer resist process provides the critical-dimension (CD) uniformity and dry-etching resistance necessary for fabricating 90nm-node via holes. As regards an overlay, a LEEPL tool aligned to an under layer printed by an ArF scanner attained 21.3nm (three sigma) overlay error, which exceeds the requirement for the 65nm node. Another concern with LEEPL application is mask contamination growth during exposure, however the contamination growth rate is gradual that the CD shift due to the contamination is under control. We applied LEEPL to 90nm-node via hole fabrication to examine whether it provides a higher resolution than an ArF scanner. We determined that the electrical-resistance limit for LEEPL is approximately 100nm diameter for a via hole and the limit for an ArF scanner is approximately 125nm diameter. Even without process optimization, LEEPL showed its advantages for via-hole fabrication over an ArF scanner.

Paper Details

Date Published: 20 May 2004
PDF: 9 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.534423
Show Author Affiliations
Tetsuya Kitagawa, Sony Corp. (Japan)
Masaki Yoshizawa, Sony Corp. (Japan)
Kazuya Iwase, Sony Corp. (Japan)
Shinji Omori, Sony Corp. (Japan)
Shoji Nohama, Sony Corp. (Japan)
Hiroyuki Nakano, Sony Corp. (Japan)
Shigeru Moriya, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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