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Proceedings Paper

Collimated laser-plasma lithography (CPL) for 90-nm and smaller contacts and vias
Author(s): Richard Forber; Celestino Gaeta; Heinz Siegert; Scott McLeod; Brent Edward Boerger
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Paper Abstract

Collimated laser-Plasma Lithography (CPL) offers potential to match Next Generation Lithography (NGL) needs, ending a pursuit of ever-larger lens NA and ever-smaller k1 process resolution factor. Powered by a laser-produced plasma (LPP) source at 1nm, it capitalizes on mature development of x-ray lithography, which is the only NGL that has produced working chips. JMAR is upgrading its CPL system to increase overall throughput (system power) and is focusing on solving a known industry problem for which CPL presents an advantage: printing sub-90nm contacts in memory chips. The paper will discuss CPL system characteristics and performance. Supporting information on the upgrades to the laser and x-ray generator will be included. Specific resists and mask techniques and the roadmap leading to multi-generational support capability down to the 45nm node will be described.

Paper Details

Date Published: 20 May 2004
PDF: 11 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.534379
Show Author Affiliations
Richard Forber, JMAR Technologies, Inc. (United States)
Celestino Gaeta, JMAR Technologies, Inc. (United States)
Heinz Siegert, JMAR Technologies, Inc. (United States)
Scott McLeod, JMAR Technologies, Inc. (United States)
Brent Edward Boerger, JMAR Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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