EUV lithography is to date the most promising NGL technology for the sub-50nm technology node. In this work, we have designed and synthesized several types of organoelement resists with low oxygen content for high transparency. Boron was incorporated in the resist structures to improve both etch resistance and transparency. Both negative-tone and positive-tone resists were made containing the carborane group. In a preliminary study, these polymers were imaged using a 248nm stepper to produce images with good resolution. The incorporation of a carborane structure provides these polymers with excellent oxygen etch resistance. Hall effect measurements were performed and no contamination was found in the substrate after applying boron-containing polymers.

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534319

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)