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Proceedings Paper

Hard phase-shifting masks for the 65-nm node: a performance comparison
Author(s): Rainer Pforr; Mario Hennig; Roderick Koehle; Nicolo Morgana; Joerg Thiele; Jens Weckesser
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Paper Abstract

The lithographic potential of various mask types for the printing of 65nm features has been investigated by simulation and experimentation. As key parameters process window, mask error enhancement factor, balancing performance, and phase and CD error susceptibility have been analyzed. Alternating chromeless phase-shifting masks (PSM) show the smallest mask error enhancement factor (MEEF), but the largest phase and CD error sensitivity. Alternating PSM have a larger MEEF but require less tight mask specifications. Double edge chromeless PSM combine small MEEF value with relaxed phase and CD control specifications when an appropriate illumination is chosen. Good intra-field CD control and sufficient large process window for 65nm pattern can be obtained for this mask type. The impact of aberrations and pupil imperfections on the CD control has been investigated. The mask processes will be discussed and mask performance data introduced.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.534091
Show Author Affiliations
Rainer Pforr, Infineon Technologies AG (Germany)
Mario Hennig, Infineon Technologies AG (Germany)
Roderick Koehle, Infineon Technologies AG (Germany)
Nicolo Morgana, Infineon Technologies AG (Germany)
Joerg Thiele, Infineon Technologies AG (Germany)
Jens Weckesser, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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