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Proceedings Paper

Carbon nanotube transistors: an evaluation
Author(s): Leonardo C. Castro; David L. John; David L. Pulfrey
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Paper Abstract

A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit; a conductance close to the interfacial limit; an ON/OFF ratio of around 103; ON current and transconductance close to the low-quantum-capacitance limit.

Paper Details

Date Published: 2 April 2004
PDF: 10 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.533349
Show Author Affiliations
Leonardo C. Castro, Univ. of British Columbia (Canada)
David L. John, Univ. of British Columbia (Canada)
David L. Pulfrey, Univ. of British Columbia (Canada)


Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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