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Proceedings Paper

High-speed GaInNAs laser diodes
Author(s): Masahiko Kondow; Kouji Nakahara; S. Fujisaki; Shigehisa Tanaka; M. Kudo; Tadashi Taniguchi; A. Terano; H. Uchiyama
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Paper Abstract

The explosive growth of Internet/intranet traffic has created a strong demand for cost-effective high-speed light-sources to be used in local access networks and data links. The frequency of relaxation oscillation (fr) is a major factor that restricts the high-speed operation of laser diodes. To achieve a high fr, the material of an active layer should have a large differential gain. By using GaInNAs, very deep quantum wells, especially in the conduction band can be formed. Deep quantum wells bring a large differential gain. In this paper, we show how GaInNAs lasers can be applied in this application

Paper Details

Date Published: 11 May 2004
PDF: 11 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.533277
Show Author Affiliations
Masahiko Kondow, Hitachi, Ltd. (Japan)
Kouji Nakahara, Hitachi, Ltd. (Japan)
S. Fujisaki, Hitachi, Ltd. (Japan)
Shigehisa Tanaka, Hitachi, Ltd. (Japan)
M. Kudo, Hitachi, Ltd. (Japan)
Tadashi Taniguchi, Hitachi, Ltd. (Japan)
A. Terano, Hitachi, Ltd. (Japan)
H. Uchiyama, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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