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Proceedings Paper

Determination of resist parameters using the extended Nijboer-Zernike theory
Author(s): Peter Dirksen; Joseph Braat; Augustus J. E. M. Janssen; Ad Leeuwestein; Hans Kwinten; David Van Steenwinckel
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Paper Abstract

This study presents an experimental method to determine the resist parameters that are at the origin of a general blurring of the projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter. The used mathematical framework is the so-called Extended Nijboer-Zernike (ENZ) theory. The experimental procedure to extract the model parameters is demonstrated for several 193 nm resists under various conditions of post exposure baking temperature and baking time. The advantage of our approach is a clear separation between the optical parameters, such as feature size, projection lens aberrations and the illuminator setting on the one hand and process parameters introducing blur on the other.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.531840
Show Author Affiliations
Peter Dirksen, Philips Research (Belgium)
Joseph Braat, Technische Univ. Delft (Netherlands)
Augustus J. E. M. Janssen, Philips Research (Netherlands)
Ad Leeuwestein, Philips Research (Netherlands)
Hans Kwinten, Philips Research (Belgium)
David Van Steenwinckel, Philips Research (Belgium)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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