Proceedings Paper
Selective deposition of GaN layers for semiconductor lasers technology| Format | Member Price | Non-Member Price |
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Paper Abstract
The method of selective deposition of GaN layer using combination of additional AlN and GaN films has been presented. All layers have been reached by lift-off technique and were etching ALN and dry etching GaN.
Paper Details
Date Published: 6 October 2003
PDF: 3 pages
Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); doi: 10.1117/12.531765
Published in SPIE Proceedings Vol. 5230:
Laser Technology VII: Progress in Lasers
Wieslaw L. Wolinski; Zdzislaw Jankiewicz; Ryszard S. Romaniuk, Editor(s)
PDF: 3 pages
Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); doi: 10.1117/12.531765
Show Author Affiliations
Beata Stanczyk, Institute of Electronic Materials Technology (Poland)
Andrzej Jagoda, Institute of Electronic Materials Technology (Poland)
Andrzej Jagoda, Institute of Electronic Materials Technology (Poland)
Lech Dobrzanski, Institute of Electronic Materials Technology (Poland)
Published in SPIE Proceedings Vol. 5230:
Laser Technology VII: Progress in Lasers
Wieslaw L. Wolinski; Zdzislaw Jankiewicz; Ryszard S. Romaniuk, Editor(s)
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