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Proceedings Paper

Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures
Author(s): Cheolung Cha; Jae Hong Kim; Zhaoran Huang; Nan Marie Jokerst; Martin A. Brooke
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Paper Abstract

Photodetectors (PDs) are an important active device in optoelectronic integrated circuits (OEICs), and, for shorter haul interconnections where circuit (e.g. transimpedance amplifier (TIA)) noise may be the dominant noise in receivers, metal-semiconductor-metal photodiodes (MSM PDs) are attractive due to their low capacitance per unit area compared to PIN photodetectors and the ease of monolithic integration with field effect transistors (FETs). Inverted-MSM PDs (I-MSM PDs), which are thin film MSM PDs with the fingers on the bottom of the device, have demonstrated higher responsivities compared to conventional MSM PDs while maintaining small capacitance per unit area, low dark current (~nA), and high speed. However, the modeling of MSM PDs and I-MSM PDs for insertion into circuit simulators for integrated PD/TIA modeling has not been reported. In this paper, an accurate high-frequency equivalent circuit-level model of thin film I-MSM PDs is obtained using an on-wafer measurement-based modeling technique. This circuit-level model of MSM PDs can be used for capacitance sensitive preamplifier design for co-optimization with widely used simulators (ADS and HSPICE). The obtained circuit-level model shows good agreement with measured s-parameters.

Paper Details

Date Published: 8 June 2004
PDF: 8 pages
Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); doi: 10.1117/12.531640
Show Author Affiliations
Cheolung Cha, Georgia Institute of Technology (United States)
Jae Hong Kim, Georgia Institute of Technology (United States)
Zhaoran Huang, Georgia Institute of Technology (United States)
Nan Marie Jokerst, Duke Univ. (United States)
Martin A. Brooke, Duke Univ. (United States)

Published in SPIE Proceedings Vol. 5353:
Semiconductor Photodetectors
Kurt J. Linden; Eustace L. Dereniak, Editor(s)

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