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Proceedings Paper

QsRAM: the new memory technology
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Paper Abstract

In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.

Paper Details

Date Published: 30 March 2004
PDF: 7 pages
Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); doi: 10.1117/12.531136
Show Author Affiliations
Sima Dimitrijev, Griffith Univ. (Australia)
Herbert B. Harrison, Griffith Univ. (Australia)

Published in SPIE Proceedings Vol. 5274:
Microelectronics: Design, Technology, and Packaging
Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste, Editor(s)

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