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Proceedings Paper

1550-nm single-mode grating-outcoupled surface emitting lasers
Author(s): Steve Patterson; Taha Masood; Nuditha V. Amarasinghe; Scott McWilliams; Duy Phan; Darren Lee; Gary A. Evans; Jerome K. Butler
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Paper Abstract

Single-frequency grating outcoupled surface emitting (GSE) semiconductor lasers emitting at 1550 nm with output powers exceeding 1.6 mW into a multi-mode fiber, threshold currents below 25 mA and with > 30 dB side-mode suppression ratios are reported. These lasers consist of a 500 μm long horizontal cavity, and a 10 μm long second-order outcoupler grating sandwiched between 250 μm long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 2.5 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 5 x 9 degrees.

Paper Details

Date Published: 11 May 2004
PDF: 7 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.530764
Show Author Affiliations
Steve Patterson, Photodigm, Inc. (United States)
Taha Masood, Photodigm, Inc. (United States)
Nuditha V. Amarasinghe, Photodigm, Inc. (United States)
Scott McWilliams, Photodigm, Inc. (United States)
Duy Phan, Photodigm, Inc. (United States)
Darren Lee, Photodigm, Inc. (United States)
Gary A. Evans, Photodigm, Inc. (United States)
Southern Methodist Univ. (United States)
Jerome K. Butler, Southern Methodist Univ. (United States)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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