Proceedings Paper
Novel low coherence metrology for nondestructive characterization of high aspect ratio micro-fabricated and micro-machined structures| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Novel nondestructive method based on low coherence optical interferometry for measurement of deep etched trenches in MEMs structures is presented. The proposed technique proves to provide very reproducible results and can be easily extended to metrology of other materials such as metals and dielectrics. We present results in real life semiconductor structures and discuss practical and fundamental limits of this technique
Paper Details
Date Published: 23 December 2003
PDF: 8 pages
Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); doi: 10.1117/12.530749
Published in SPIE Proceedings Vol. 5343:
Reliability, Testing, and Characterization of MEMS/MOEMS III
Danelle M. Tanner; Rajeshuni Ramesham, Editor(s)
PDF: 8 pages
Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); doi: 10.1117/12.530749
Show Author Affiliations
Wojciech Walecki, Frontier Semiconductor Measurements, Inc. (United States)
Frank Wei, Frontier Semiconductor Measurements, Inc. (United States)
Phuc Van, Frontier Semiconductor Measurements, Inc. (United States)
Kevin Lai, Frontier Semiconductor Measurements, Inc. (United States)
Frank Wei, Frontier Semiconductor Measurements, Inc. (United States)
Phuc Van, Frontier Semiconductor Measurements, Inc. (United States)
Kevin Lai, Frontier Semiconductor Measurements, Inc. (United States)
Published in SPIE Proceedings Vol. 5343:
Reliability, Testing, and Characterization of MEMS/MOEMS III
Danelle M. Tanner; Rajeshuni Ramesham, Editor(s)
© SPIE. Terms of Use
