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Proceedings Paper

Ultraviolet InGaN, AlGaN, and InAIGaN multiple-quantum-well laser diodes
Author(s): Michael Kneissl; David W. Treat; Mark Teepe; Naoko Miyashita; Noble M. Johnson
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Paper Abstract

Design and performance characteristics of InGaN, AlGaN and InAlGaN multiple quantum well (MQW) laser diodes emitting in the ultraviolet spectral region are reported. The nitride laser diodes were grown on quasi-bulk GaN and c-plane sapphire substrates by metalorganic chemical vapor deposition. By reducing the indium content in the InGaN MQW, we have realized laser diodes on GaN substrates emitting at wavelength as short as 366.9 nm with pulsed threshold current densities around 8kA/cm2. Improved performance characteristic with differential quantum efficiencies of 7.7% and light output powers of close to 400mW were obtained. We also demonstrate room-temperature pulsed operation of AlGaN and InAlGaN MQW laser diodes grown on sapphire substrates emitting at a record short wavelength of 357.9nm. Light output powers greater than 80mW under pulsed current-injection conditions and differential quantum efficiencies of 4.2% have been achieved.

Paper Details

Date Published: 11 May 2004
PDF: 4 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.529505
Show Author Affiliations
Michael Kneissl, Palo Alto Research Ctr. (United States)
David W. Treat, Palo Alto Research Ctr. (United States)
Mark Teepe, Palo Alto Research Ctr. (United States)
Naoko Miyashita, Palo Alto Research Ctr. (United States)
Noble M. Johnson, Palo Alto Research Ctr. (United States)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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