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Proceedings Paper

High-quantum-efficiency solar-blind photodetectors
Author(s): Ryan McClintock; Alireza Yasan; Kathryn Alissa Mayes; Derek James Shiell; Shaban Ramezani Darvish; Patrick Kung; Manijeh Razeghi
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Paper Abstract

We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.

Paper Details

Date Published: 6 July 2004
PDF: 11 pages
Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); doi: 10.1117/12.529348
Show Author Affiliations
Ryan McClintock, Northwestern Univ. (United States)
Alireza Yasan, Northwestern Univ. (United States)
Kathryn Alissa Mayes, Northwestern Univ. (United States)
Derek James Shiell, Northwestern Univ. (United States)
Shaban Ramezani Darvish, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 5359:
Quantum Sensing and Nanophotonic Devices
Manijeh Razeghi; Gail J. Brown, Editor(s)

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