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Proceedings Paper

Thermal annealing effect on InGaAsN/GaAs lasers
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Paper Abstract

Before processing the InGaAsN/GaAs edge emitting lasers, post-growth rapid thermal annealing (RTA) was applied on the wafer. Different RTA results in different threshold current density (Jth). RTA at 720°C reduces the Jth significantly but keeps the linear fit slope of Jth vs 1/L (L is the cavity length). It indicates that RTA at 720°C can decrease the absorption losses. High temperature RTA at 890°C can dramatically decrease the linear fit slope, which indicates that the carrier conductivity is improved dramatically even the RTA time is only one second.

Paper Details

Date Published: 11 May 2004
PDF: 6 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.529120
Show Author Affiliations
Changsi Peng, Tampere Univ. of Technology (Finland)
Janne Konttinen, Tampere Univ. of Technology (Finland)
Suvi Karirinne, Tampere Univ. of Technology (Finland)
Tomi Jouhti, Tampere Univ. of Technology (Finland)
Hongfei Liu, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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