Share Email Print

Proceedings Paper

Nitride-based in-plane laser diodes with vertical currrent path
Author(s): Ulrich T. Schwarz; Werner Wegscheider; Alfred Lell; Volker Haerle
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The realization of group III--nitride laser diodes with a vertical current path on a n-conducting SiC substrate is described. The vertical current path and the possibility of cleaved laser facets result in a simpler process technology. Gain spectra measured by the Hakki-Paoli method show a modulation of the modal gain due to parasitic modes in the SiC substrate. As up to now no defect reduction technique was successfully transfered to GaN on SiC, degradation is the major issue. We discuss the impact of degradation on the gain spectra, facet degradation, and rule out formation of cracks during degradation. We show that the high heat conductivity of SiC may give an advantage with respect to degradation as it results in a only moderate temperature rise of the active region.

Paper Details

Date Published: 11 May 2004
PDF: 11 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.529087
Show Author Affiliations
Ulrich T. Schwarz, Univ. Regensburg (Germany)
Werner Wegscheider, Univ. Regensburg (Germany)
Alfred Lell, OSRAM Opto Semiconductors GmbH (Germany)
Volker Haerle, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

© SPIE. Terms of Use
Back to Top