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Proceedings Paper

Optical and thermomechanical properties of plasma-enhanced CVD silicon dioxide films upon annealing
Author(s): Duk Yong Choi; Kyung Hee You; Sofia Guessel; Sun Tae Jung
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Paper Abstract

Device parameters, like center frequency, polarization dependent loss (PDL), and optical crosstalk in silica-based waveguide device, are determined by the refractive index (RI) and its uniformity across the wafer, thermal expansion coefficient (TCE), and biaxial elastic modulus of silica film. In this study the optical and thermo-mechanical properties of plasma enhanced CVD silica films with different compositions were investigated before and after thermal annealing. RI of deposited films decreased sharply with N2O/SiH4 ratio up to 40, and increased slowly when this ratio was larger than 60. The minimum RI of deposited film was found slightly higher than that of thermal oxide. CTE and elastic modulus of silica film were obtained by measuring the film stress with temperature. Growth stresses of deposited films were increased with N2O/SiH4 ratio. Due to the porous structure, the CTE and elastic modulus of deposited films at low temperature range (<400°C) were different from those of pure silica. Sharp rise in stress due to gas evolution from film was observed around 500°C. The amount of stress increase and the origin of evolved gas are dependent on the film composition. When silica films were fully annealed (1100°C for 4hour), their CTE and elastic modulus were the same as those of thermal oxide. Upon annealing at high temperature (~800°C), however, cracks were generated on sub-oxide film, which was deposited at low N2O/SiH4 ratio. RI of annealed films changed with the composition of deposited film, the annealing temperature, and the cooling rate after anneal.

Paper Details

Date Published: 28 May 2004
PDF: 12 pages
Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); doi: 10.1117/12.529062
Show Author Affiliations
Duk Yong Choi, Samsung Advanced Institute of Technology (South Korea)
Kyung Hee You, Samsung Advanced Institute of Technology (South Korea)
Sofia Guessel, Samsung Advanced Institute of Technology (South Korea)
Sun Tae Jung, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5355:
Integrated Optics: Devices, Materials, and Technologies VIII
Yakov Sidorin; Ari Tervonen, Editor(s)

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