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Proceedings Paper

Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm
Author(s): Mariusz Zbroszczyk; Maciej Bugajski
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Paper Abstract

The laser diodes and laser bars with InGaAlAs/GaAs active region are attractive as high power devices operating at around 808 nm. The quaternary InGaAlAs active region seems to have distinctive advantages over the standard GaAs quantum well construction. The most important of them is that quantum wells, required to achieve desired wavelength can be wider, which provides better carrier confinement. Another advantage is better thermal conductivity of InGaAlAs as comparing to GaAs. We have modeled single and double quantum well separate confinement heterostructure lasers with various cavity lengths. The well thickness and indium content in the active region were optimized to obtain 808 nm wavelength with acceptable threshold current density. Numerical simulation based on the selfconsistent solution of drift diffusion equations, Schrödinger equation and photon rate equation has been used to optimize the high power lasers design. In this work we have used commercial simulation package PICS3D developed by Crosslight Soft. Inc.

Paper Details

Date Published: 18 June 2004
PDF: 8 pages
Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); doi: 10.1117/12.529009
Show Author Affiliations
Mariusz Zbroszczyk, Institute of Electron Technology (Poland)
Maciej Bugajski, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 5349:
Physics and Simulation of Optoelectronic Devices XII
Marek Osinski; Hiroshi Amano; Fritz Henneberger, Editor(s)

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