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Proceedings Paper

Lateral mode selection in a broad-area laser diode by self-injection locking with a mirror stripe
Author(s): Birgitte Thestrup; Mingjun Chi; Paul Michael Petersen
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Paper Abstract

In this paper, we demonstrate lateral mode selection and amplification in a broad area laser (BAL) diode in an external cavity. The cavity is based on self-injection locking of an 807 nm, 3W broad area diode using a mirror stripe as the feedback unit. At the optimum mirror stripe position, the lateral far-field intensity profile is narrowed 8.5 times compared with the profile from the freely running laser when running at a drive current of twice the threshold current. We have determined the lateral angular range, in which, different array modes can be exited and, only, within a narrow range around 2.3° from the beam center a high, spatial beam coherence can be obtained.

Paper Details

Date Published: 1 June 2004
PDF: 7 pages
Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, (1 June 2004); doi: 10.1117/12.529005
Show Author Affiliations
Birgitte Thestrup, Riso National Lab. (Denmark)
Mingjun Chi, Riso National Lab. (Denmark)
Paul Michael Petersen, Riso National Lab. (Denmark)

Published in SPIE Proceedings Vol. 5336:
High-Power Diode Laser Technology and Applications II
Mark S. Zediker, Editor(s)

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