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Proceedings Paper

Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN
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Paper Abstract

Field-induced electron transport in an InxGa1-xN (x≅0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the InxGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Paper Details

Date Published: 16 June 2004
PDF: 8 pages
Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); doi: 10.1117/12.528322
Show Author Affiliations
W. Liang, Arizona State Univ. (United States)
Kong-Thon Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
K. H. Kim, Kansas State Univ. (United States)
Jing Yu Lin, Kansas State Univ. (United States)
Hongxing Jiang, Kansas State Univ. (United States)

Published in SPIE Proceedings Vol. 5352:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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