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Proceedings Paper

High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile
Author(s): Roman L. Sellin; Dieter H. Bimberg; Victor M. Ustinov; Nikolai N. Ledentsov; Ilia N. Kaiander; Matthias Kuntz; Matthias Lämmlin; Kay Ti Tan; Claudio Marinelli; Mark G. Thompson; Adrian Wonfor; Richard V. Penty; Ian H. White; David O'Brien; Stephan P. Hegarty; Guillaume Huyet; John Gerard McInerney; J. Kenton White
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Paper Abstract

Universal self-organisation on surfaces of semiconductors upon deposition of a few non-lattice-matched monolayers using MOCVD or MBE lead to the formation of quantum dots. Their electronic and optical properties are closer to those of atoms than of solids. We have demonstrated for QD-lasers a record low transparency current density of 6A/cm2 per dot layer at 1.16 μm, high-power of 12W, an internal quantum efficiency of 98%, and an internal loss below 1.5 cm-1. Relaxation oscillations indicate the potential for cut-off frequencies larger than 10 GHz. GaAs-based QD-lasers emitting at 1.3 μm exhibit output power of 5 W and single transverse mode operation up to 300 mW. At 1.5 μm again an output power of 5 W has been obtained for first devices showing a transparency current of 700 A/cm2. Single mode lasers at 1.16 and 1.3 μm show no beam filamentation, reduced M2, sensitivity to optical feedback by 30 db and α-parameter as compared to quantum well lasers. Passive mode locking of 1.3 μm lasers up to 20 GHz is obtained. Thus GaAs-lasers can now replace InP-based ones at least in the range up to 1.3 µm, probably up to 1.55 μm.

Paper Details

Date Published: 11 May 2004
PDF: 14 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.528296
Show Author Affiliations
Roman L. Sellin, Univ. of Cambridge (United Kingdom)
Technische Univ. Berlin (Germany)
Dieter H. Bimberg, Technische Univ. Berlin (Germany)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai N. Ledentsov, Technische Univ. Berlin (Germany)
Ilia N. Kaiander, Technische Univ. Berlin (Germany)
Matthias Kuntz, Technische Univ. Berlin (Germany)
Matthias Lämmlin, Technische Univ. Berlin (Germany)
Kay Ti Tan, Univ. of Cambridge (United Kingdom)
Claudio Marinelli, Univ. of Cambridge (United Kingdom)
Mark G. Thompson, Univ. of Cambridge (United Kingdom)
Adrian Wonfor, Univ. of Cambridge (United Kingdom)
Richard V. Penty, Univ. of Cambridge (United Kingdom)
Ian H. White, Univ. of Cambridge (United Kingdom)
David O'Brien, Univ. College Cork (Ireland)
Stephan P. Hegarty, Univ. College Cork (Ireland)
Guillaume Huyet, Univ. College Cork (Ireland)
John Gerard McInerney, Univ. College Cork (Ireland)
J. Kenton White, Bookham Technology (Canada)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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