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Proceedings Paper

Dual-wavelength semiconductor laser with 191-nm mode spacing
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Paper Abstract

A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.

Paper Details

Date Published: 11 May 2004
PDF: 8 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.525582
Show Author Affiliations
Chi-Chia Huang, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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